2022-04-052022-04-052012Ahmetoğlu, M. vd. (2012). "Electrical properties of GaAs-GaAlAs near infrared light emitting diodes". Optoelectronics and Advanced Materials-Rapid Communications, 6(9-10), 782-784.1842-65732065-3824https://oam-rc.inoe.ro/volume/2012/6/9-10/September-October%202012/articleshttp://hdl.handle.net/11452/25550The electrical properties have been studied for GaAs/AlxGa1-xAs based infrared light emitting diode. The characteristics of the device have been analyzed and unusual feature of the device was observed. It operates as avalanche photodiode when it is reverse biased, while it operates as light emitting diode (LED) when it is forward biased.eninfo:eu-repo/semantics/closedAccessMaterials scienceOpticsLight emitting diodeAvalanche breakdownI-V characteristicsAluminum gallium arsenideDiodesGallium arsenideIII-V semiconductorsInfrared devicesLight emitting diodesSemiconducting galliumInfrared light emitting diodesIV characteristicsNear infrared lightAvalanche diodesArticle0003104981000022-s2.0-8487223933878278469-10Materials science, multidisciplinaryOpticsLiquid Phase Epitaxy; Photoconductive Cells; Inp