Ertürk, Kadir2024-03-052024-03-052008-06-10Ertürk, K. vd. (2008). "Temperature dependence of electrical characteristics of Cr/p-Si(100) Schottky barrier diodes". International Journal of Modern Physics B, 22(14), 2309-2319.0217-9792https://doi.org/10.1142/S0217979208039496https://www.worldscientific.com/doi/10.1142/S0217979208039496https://hdl.handle.net/11452/40217The electrical characteristics of Cr/p-Si(100) Schottky barrier diodes have been measured in the temperature range of 100-300 K. The I-V analysis based on thermionic emission (TE) theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperature. The conventional Richardson plot exhibits non-linearity below 200 K with the linear portion corresponding to activation energy 0.304 eV and Richardson constant (A*) value of 5.41 x 10(-3) Acm(-2)K(-2) is determined from the intercept at the ordinate of this experimental plot, which is much lower than the known value of 32 Acm(-2)K(-2) for p-type Si. It is demonstrated that these anomalies result due to the barrier height inhomogeneities prevailing at the metal-semiconductor interface. Hence, it has been concluded that the temperature dependence of the I-V characteristics of the Cr/p-Si Schottky barrier diode can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. Furthermore, the value of the Richardson constant found is much closer than that obtained without considering the inhomogeneous barrier heights.eninfo:eu-repo/semantics/closedAccessBarrier height inhomogeneityGaussian distributionMetal-semiconductor contactI-v measurementsAg/p-snsHeightContactsGaasInhomogeneitiesParametersTransportVoltageRangePhysicsTemperature dependence of electrical characteristics of Cr/p-Si(100) Schottky barrier diodesArticle0002572975000092-s2.0-44949229109230923192214Physics, appliedPhysics, condensed matterPhysics, mathematicalSchottky Diodes; Thermionic Emission; Electrical Properties