2022-09-272022-09-272011-11-01Kılıç, A. vd. (2011). "Simulation of displacement damage for silicon avalanche photo-diodes". Nuclear Instruments & Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Associated Equipment, 658(1), 70-72.0168-90021872-9576https://doi.org/10.1016/j.nima.2011.05.073https://www.sciencedirect.com/science/article/pii/S0168900211010801http://hdl.handle.net/11452/28854Bu çalışma, 12-15 Ekim 2010 tarihleri arasında Florence[İtalya]’da düzenlenen International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices (RESMDD)’da bildiri olarak sunulmuştur.The silicon avalanche photo-diodes (APDs) in the CMS barrel electromagnetic calorimeter will be exposed to an integrated neutron fluence of about 2 x 10(13) n/cm(2) over 10 years of operation. High neutron fluences change the electrical properties of silicon detectors. The changes are proportional to the non-ionising energy loss in the APDs. Using the Geant4 toolkit, we have calculated the non-ionising energy loss as well as the rate of generation of primary defects in the APDs, for the expected neutron fluence.eninfo:eu-repo/semantics/openAccessInstruments & instrumentationNuclear science & technologyPhysicsRadiation damageAvalanche photo-diodeGeant4 simulationPhotodiodesDetectorsNielDiodesElectric propertiesElectron energy loss spectroscopyEnergy dissipationHigh energy physicsNeutronsRadiation damageRadiation detectorsSemiconducting silicon compoundsSilicon detectorsBarrel electromagnetic calorimetersDisplacement damagesEnergy lossGEANT4 simulationGeant4 toolkitsNeutron fluencesSilicon avalancheAvalanche diodesArticle0002977833000162-s2.0-8025512329070726581Instruments & instrumentationNuclear science & technologyPhysics, nuclearPhysics, particles & fieldsHeavy Ions; Fluence; Trapping