Mikhailova, M. P.Stoyanov, NkolayAndreychuk, O. V.Moiseev, K. D.Andreev, IgorYakovlev, Yu P.2022-09-142022-09-142002-02Mikhailova, M. P. (2002). "Type IIGaSb based photodiodes operating in spectral range 1.5-4.8 mu m at room temperature". IEEE Proceedings Optoelectronics, 149(1), 41-44.1350-2433https://doi.org/10.1049/ip-opt:20020348https://digital-library.theiet.org/content/journals/10.1049/ip-opt_20020348http://hdl.handle.net/11452/28713The authors present results of research and development of mid-infrared photodiodes based on antimonide solid solutions operating at room temperature in the spectral range of 1.5-4.8 mum. A new physical approach to the design of long-wavelength photodiodes is proposed by using type II broken-gap heterostructures grown by liquid-phase epitaxy on GaSb substrates. The choice of sequence of the narrow-gap and wide-gap layers in the GaSb/InGaAsSb/GaInAsSb and GaSb/InGaAsSb/AlGaAsSb heterostructures allows one to vary the band energy diagram and barrier heights on the interface. Electrical and photoelectrical parameters of three kinds of devices were studied. A detectivity of D-lambda* = 4.1 x 10(8) cm Hz(1/2)/W was found at lambda = 4.7 mum, T = 300 K.eninfo:eu-repo/semantics/closedAccessEmissionEngineeringOpticsTelecommunicationsEnergy gapThermodynamic equilibriumPhotodiodesBand bendingBand energy diagramBarrier heightsCapacitance voltage characteristicsCarrier separationHole concentrationLong wavelength photodiodesPhotoelectrical parametersSpectral responseSemiconductor growthHeterojunctionsInterfaces (materials)Lattice constantsLiquid phase epitaxyOhmic contactsSemiconducting antimony compoundsSemiconducting indium compoundsSemiconductor device manufactureSolid solutionsSubstratesArticle0001751207000092-s2.0-003647678241441491Engineering, electrical & electronicOpticsTelecommunicationsSemiconductor Quantum Wells; Heterostructures; Photodiodes