Andreev, Igor A.Kunitsyna, Ekaterina V.Mikhaǐlova, Maya P.Yakovlev, Yu P.2024-03-212024-03-212007Ahmetoğlu, M. A. vd. (2007). "Gallium antimonide - Based photodiodes and thermophotovoltaic devices". ed, S. A. Çetin ve İ. Hikmet. AIP Conference Proceedings, 6. International Conference of the Balkan Physical Union, 899, 447-448.978-0-7354-0404-50094-243Xhttps://doi.org/10.1063/1.2733229https://aip.scitation.org/doi/pdf/10.1063/1.2733229https://hdl.handle.net/11452/40549Bu çalışma, 22-26, Ağustos 2006 tarihlerinde İstanbul[Türkiye]’de düzenlenen 6. International Conference of the Balkan-Physical-Union Kongresi‘nde bildiri olarak sunulmuştur.This paper briefly presents some important aspects of the GaSb-based material growth, as well as the performance of photodiodes and TPV devices for the 0.9-2.55 mu m spectral range. A reproducible technique has been developed for the production of high-speed and high-efficiency GaSb/GaInAsSb/GaAlAsSb photodiodes. The detectivity of the photodiodes, estimated from the measured noise level and monochromatic current sensitivity, in the spectral peak reaches D*(lambda(max), 1000,1)=(0.8-1.0)x10(11) W(-1)xcmxHz(1/2) at room temperature. Recently, we have adapted the technology for creating GaInAsSb (0.52-0.53 eV band gap) TPV devices. Based on the our results we believe a 0.5 eV band gap GaSb-based TPV cell with an open-circuit voltage well over 300 mV at current 2-3 A is a realistic near-term goal.eninfo:eu-repo/semantics/closedAccessGaInAsSbPhotodiodeGaSbTPV deviceHeterostructureGa1-xinxasysb1-yArticle0002466479002022-s2.0-34547455798447448899Physics, multidisciplinaryDefects; Molecular Beam Epitaxy; Ammonium Sulfide