2024-03-072024-03-072007-04Ahmetoğlu, M. A. vd. (2007). "Electrical properties of n-Si/Cu Schottky diodes formed by electrodeposition". Journal of Optoelectronics and Advanced Materials, 9(4), 818-821.1454-4164https://hdl.handle.net/11452/40276Bu çalışma, 05-07. Temmuz 2006 tarihlerinde Constanta[Romanya]’da düzenlenen 7. International Balkan Workshop on Applied Physics Kongresi‘nde bildiri olarak sunulmuştur.In this paper we report the electrical characteristics of the Schottky diodes formed by electrodeposition of copper on n-Si (111) from 0.2 M CuSO4 5H(2)O + 0.5 M H3BO3 (pH=2.0) solution. Electrical measurements have been carried out at room temperature. n-Si/Cu diode current-voltage characteristics display low reverse-bias leakage currents and average barrier heights of 0.59 +/- 0.02 eV and 0.67 +/- 0.02 eV obtained from both I-V and C-V measurements at room temperature, respectively.eninfo:eu-repo/semantics/closedAccessElectrical propertiesSchottky diodesElectrodepositionDepositionHydrogenSurfacesMaterials scienceOpticsPhysicsCurrent voltage characteristicsDiodesSchottky barrier diodesElectric propertiesLeakage currentsElectrodepositionElectrodesSiliconBarrier heightsC-V measurementSchottky diodesDiode currentsReverse bias leakage currentElectrical characteristicElectrical measurementSi (1 1 1)Copper compoundsArticle0002458348000042-s2.0-3854915508481882194Materials science, multidisciplinaryOpticsPhysics, appliedCatalysis; Born-Oppenheimer Approximation; Molecular Relaxation1841-7132