2022-06-202022-06-202004-05Afrailov, M. A. (2004). “Electrical and photoelectrical properties of isotype N+-GaSb/n(0)-GaInAsSb type II heterojunctions”. Infrared Physics and Technology, 45(3), 169-175.1350-4495https://doi.org/10.1016/j.infrared.2003.09.001https://www.sciencedirect.com/science/article/pii/S1350449503002305http://hdl.handle.net/11452/27328Dark current voltage characteristics, spectral response and energy diagrams have been studied for LPE grown isotype heterostructures lattice-matched to GaSb substrates. The dark current mechanisms in the isotype heterostructures were investigated at several temperatures. It is shown that a type II staggered heterojunction can behave as a Schottky diode and the dark current-voltage characteristics of this isotype heterostructures were rectifying over the whole temperature range 90-300 K. The photocurrent sign dependence on photon energy has been studied as a function of forward bias.eninfo:eu-repo/semantics/closedAccessInstruments and InstrumentationOpticsPhysicsIsotype structuresType II heterojunction with staggered band alignmentPhoto-responseDark currentDoping (additives)Electric potentialEnergy gapHeterojunctionsLight emitting diodesPhotodetectorsPhotoelectricityPhotosensitivityGallium alloysArticle0002207843000022-s2.0-1842614402169175453Instruments and instrumentationOpticsPhysics, appliedSemiconductor Quantum Wells; Indium Arsenide; Photodiodes