Kaya, ŞenolYılmaz, ErcanKaraçalı, Hüseyin2022-06-132022-06-132015-09-01Kaya, S. vd. (2015). "Frequency dependent gamma-ray irradiation response of Sm2O3 MOS capacitors". Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 358, 188-193.0168-583Xhttps://doi.org/10.1016/j.nimb.2015.06.037https://www.sciencedirect.com/science/article/pii/S0168583X15005741http://hdl.handle.net/11452/27079The frequency dependent irradiation influences on Sm2O3 MOS capacitors have been investigated and possible use of Sm2O3 in MOS-based radiation sensor was discussed in this study. To examine their gamma irradiation response over a range of doses, the fabricated MOS capacitors were irradiated up to 30 grays. Capacitance-Voltage (C-V) measurements were recorded for various doses and the influences of irradiation were determined from the mid-gap and flat-band voltage shifts. In addition, the degradations of irradiation have been studied by impedance based leakage current-voltage (J-V) characteristics. The results demonstrate that J-V characteristics have not been significantly change by irradiation and implying that the excited traps have a minor effect on current for given dose ranges. However, the frequency of applied voltage during. the C-V measurements affects the irradiation response of devices, significantly. The variations on the electrical characteristics may be attributed to the different time dependency of acceptor and donor-like interface states. In spite of the variations on the device characteristics, low frequency measurements indicate that Sm2O3 is a potential candidate to be used as a dielectric layer in MOS based irradiation sensors.eninfo:eu-repo/semantics/closedAccessInterface statesIrradiation effectsOxide trapped chargesSm2O3 MOS capacitorsInterface-trap densityElectrical characteristicsSeries resistanceThin-filmsSubstrateOxidesDielectricsStatesLayerInstruments & instrumentationNuclear science & technologyPhysicsCapacitanceCapacitorsDielectric devicesGamma raysInterface statesIrradiationSamarium compoundsCapacitance voltage measurementsDevice characteristicsElectrical characteristicFlat-band voltage shiftGamma-ray irradiationIrradiation effectLow frequency measurementsOxide trapped chargeMOS capacitorsArticle0003591708000302-s2.0-84934783588188193358Instruments & instrumentationNuclear science & technologyPhysics, atomic, molecular & chemicalPhysics, nuclearSchottky Diodes; Thermionic Emission; Electrical Properties