Andreev, Igor A.Kunitsyna, Ekaterina V.Mikhaǐlova, Maya P.Yakovlev, Yu P.2024-02-062024-02-062014-02Kucur, B. vd. (2014). "Electrical properties of GaInAsSb/GaSb/GaAlAsSb Double Heterostructure with low diameter". Acta Physica Polonica A, 125(2), 411-413.0587-42461898-794Xhttps://doi.org/10.12693/APhysPolA.125.411http://przyrbwn.icm.edu.pl/APP/PDF/125/a125z2p078.pdfhttps://hdl.handle.net/11452/39537GaInAsSb/GaSb/GaAlAsSb double heterostructures are attractive for optoelectronic devices working in the 1.5-4.8,mu m wavelength region. In this paper, the current mechanisms of liquid phase epitaxy grown GaInAsSb based double heterostructures with 100,mu m diameter were investigated in the temperature range 77-350 K. It was found that diffusion current dominates at the high temperature (> 240 K) and small forward bias region, while generation-recombination current dominates at intermediate temperatures (242-171 K). At low temperature region (< 171 K), the tunneling mechanism of the current flow dominates in both forward and reverse biases.eninfo:eu-repo/semantics/openAccessField effect transistorsOptoelectronic devicesCurrent mechanismsWavelength regionsDiffusion currentsTunneling mechanismDouble heterostructuresLow temperature regionsGeneration-recombinationIntermediate temperaturesElectric propertiesArticle0003398254000792-s2.0-848968072004114131252Physics, multidisciplinarySemiconductor Quantum Wells; Indium Arsenide; Photodiodes