2023-05-152023-05-152013-01Ahmetoğlu, M. ve Kucur, B. (2013). “Determination of carrier concentrations in P-GaSb/n-InGaAsSb type II misaligned heterojunctions by the conductivity-magnetic field dependence”. Sensor Letters, 11(1), Special Issue, 202-204.1546-198Xhttps://doi.org/10.1166/sl.2013.2804https://www.ingentaconnect.com/content/asp/senlet/2013/00000011/00000001/art00052;jsessionid=3bxtvrldo68fo.x-ic-live-01http://hdl.handle.net/11452/32664We present results in studying narrow-gap misaligned heterojunctions based on InxGa1-x,AsySb1-y/GaSb solid solutions with a composition close to In As (x >= 0.80, E-g = 0.26 eV at T = 300 K). Unusual asymmetric electrical properties of the heterostructures (N-n, P-p, N-p and P-n) as well as their energy band diagrams are discussed. The ohmic behaviour of P-GaSb/n-InGaAsSb structure and diode-like I-V characteristics of the N-p, N-n and P-p junctions have been observed in the temperature region from 4.2 K up to 300 K. Concentration of the P-n structure with ohmic behavior was determined by the conductivity-magnetic field dependence.eninfo:eu-repo/semantics/closedAccessChemistryElectrochemistryInstruments & instrumentationPhysicsHeterostructureEnergy band diagramCarrier concentrationInfrared-lasersInasBand structureElectric propertiesMagnetic fieldsEnergy-band diagramField dependenceInAsIV characteristicsOhmic behaviorOhmic behaviourTemperature regionsType IIHeterojunctionsArticle0003215934000512-s2.0-84877986092202204111, Special IssueChemistry, analyticalElectrochemistryInstruments & instrumentationPhysics, appliedSemiconductor Quantum Wells; Indium Arsenide; Photodiodes