Browsing by Author "Mikhailova, Maya P."

Filter results by typing the first few letters
Now showing 1 - 3 of 3
  • No Thumbnail Available
    Item
    Electrical and optical characteristics of the InAs/InAs0.7Sb0.1P0.2 single heterojunction photodiodes for the spectral range 1.6-3.5 mu m
    (Elsevier, 2012-01) Andreev, Igor A.; Kunitsyna, Ekaterina V.; Moiseev, Konstantin D.; Mikhailova, Maya P.; Yakovlev, Yu P.; Ahmetoğlu, Muhitdin; Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.; 16021109400
    The electrical end optical characteristics of InAs/InAs0.7Sb0.1P0.2 heterojunctions were studied. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results shows that, the low temperature region the tunneling mechanism of the current flow dominates in both, forward and reverse biases. At high temperatures region and in the range of voltage from 0.1 V to 1 V. the reverse current was defined by diffusion mechanism.
  • Thumbnail Image
    Item
    Electrical characteristics and temperature dependence of photovoltaic parameters of GaInAsSb based TPV diode
    (Polish Acad Sciences Inst Physics, 2016-04) Andreev, Iereus Alexey; Kunitsyna, Ekaterina V.; Mikhailova, Maya P.; Yakovlev, Yury P.; Kucur, Banu; Ahmetoğlu, Muhitdin; Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.; CZA-5782-2022; CCC-9142-2022; 36903670200; 16021109400
    In this paper, electrical characterization of low bandgap GaInAsSb based thermophotovoltaic (TPV) diodes were investigated, as well as the temperature dependence of photovoltaic parameters such as short circuit current (I-sc) and open circuit voltage (V-oc). Investigation of the dark current mechanisms of the structure was carried out at several temperatures. The effect of light intensity on current-voltage characteristics was also investigated.
  • No Thumbnail Available
    Item
    Electrical properties of isotype N+-GaSb/n(0)-GaInAsSb/N+-GaAlAsSb type-II heterojunctions
    (Pleiades Publishing, 2006-06-07) Andreev, Igor A.; Kunitsyna, Ekaterina V.; Mikhailova, Maya P.; Yakovlev, Yu P.; Ahmetoğlu, Muhitdin A.; Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.; 16021109400
    Band diagrams and current-voltage and capacitance-voltage characteristics of isotype N+-GaSb/n(0)-GaInAsSb/N+-GaAlAsSb heterostructures have been studied. Dark-current flow mechanisms have been analyzed. It is shown that a staggered type-II heterojunction can behave as a Schottky diode and its current-voltage characteristics exhibit rectifying properties over the entire temperature range 90-300 K. The thermionic-emission current predominates at high temperatures and low voltages. This current is due to thermal excitation of electrons from GaInAsSb to GaSb over the barrier at the heterointerface. A comparison of the relevant theoretical and experimental data confirmed that the tunneling charge transport mechanism plays the key role at low temperatures under both forward and reverse biases.