Browsing by Author "Andreev, Igor"

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    Electrical properties of photodiodes based on p-GaSb/p-GaInAsSb/N-GaAlAsSb heterojunctions
    (Maik Nauka/Interperiodica/Springer, 2008-11) Andreev, Igor; Kunitsyna, Ekaterina; Mikhailova, Maya; Yakovlev, Yu. P.; Ahmetoglu, Muhitdin; Kaynak, Gökay; Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.; 16021109400; 12042075600
    We have studied the electrical characteristics of photodiodes based on p-GaSb/p-GaInAsSb/N-GaAlAsSb heterojunctions and investigated the mechanisms of current transfer in these heterostructures at various temperatures. A comparison of the theoretical results and experimental data showed that the tunneling charge transfer mechanism dominates at low temperatures (T < 150 K) under both forward and reverse bias conditions. The tunneling current becomes a determining factor at an electric field strength in the p-n junction of no less that 10(5) V/cm, which is related to a small bandgap width of the materials studied and low effective masses of electrons and holes.
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    Type IIGaSb based photodiodes operating in spectral range 1.5-4.8 mu m at room temperature
    (IEEE, 2002-02) Mikhailova, M. P.; Stoyanov, Nkolay; Andreychuk, O. V.; Moiseev, K. D.; Andreev, Igor; Yakovlev, Yu P.; Afrailov, M. Ahmetoğlu; Uludağ Üniversitesi.; 55153359100
    The authors present results of research and development of mid-infrared photodiodes based on antimonide solid solutions operating at room temperature in the spectral range of 1.5-4.8 mum. A new physical approach to the design of long-wavelength photodiodes is proposed by using type II broken-gap heterostructures grown by liquid-phase epitaxy on GaSb substrates. The choice of sequence of the narrow-gap and wide-gap layers in the GaSb/InGaAsSb/GaInAsSb and GaSb/InGaAsSb/AlGaAsSb heterostructures allows one to vary the band energy diagram and barrier heights on the interface. Electrical and photoelectrical parameters of three kinds of devices were studied. A detectivity of D-lambda* = 4.1 x 10(8) cm Hz(1/2)/W was found at lambda = 4.7 mum, T = 300 K.